دیتاشیت FDB12N50FTM-WS

FDB12N50F

مشخصات دیتاشیت

نام دیتاشیت FDB12N50F
حجم فایل 786.6 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت FDB12N50F

FDB12N50F Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: FDB12
  • detail: N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK